Project 06 – Organic films grown by Hot Wall Epitaxy on inorganic or organic surfaces: towards device applicationHelmut Sitter, ao.Univ.Prof.Mag.DI.Dr The Hot Wall Epitaxy (HWE) is a growth method working close to thermodynamic equilibrium, which is favourable in the case of week interaction between substrate and impinging molecules. Therefore HWE will reflect much more pronounced the influence of the interface properties on the growth process, then many other evaporation techniques. The planed four HWE systems will be the working horse to fabricate the layer structures needed for the device oriented groups. To fulfil these demands at first the optimal growth parameters have to be found to obtain highly ordered layers of organic materials. This task can be approached by growing on mono-crystalline substrates like KCL, NACL and TIO2. The other possibility to create a high degree of order is to use the self organisation of the organic molecules. Two types of small molecules can be used for this purpose, elongated ones like p6P, p6T and pentacene, or disc and spherical shaped ones like ZNPC, CUPC and C60. The high degree of order is absolutely necessary to diminish the scattering centres in the layers for the free carriers and therewith to increase their mobility. The self ordering of the molecules can be enhanced by functionalised end groups on the elongated molecules. Based on the input of the chemistry group and the theoretical predictions we will chose the optimal combination of substrate and molecules to achieve the best device performance.    |
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